Estimating Breakdown Voltage & Current in P-N Junction Diodes: Microelectronics Tech. - Pr, Assignments of Electrical and Electronics Engineering

Download Estimating Breakdown Voltage & Current in P-N Junction Diodes: Microelectronics Tech. - Pr and more Assignments Electrical and Electronics Engineering in PDF only on Docsity! 1 ECSE-2210 Microelectronics Technology Class Activity 15 1. Consider a planar p+-n Si step junction diode with an n-side doping of ND = 1015 cm–3 at T = 300 K. a. Estimate the approximate breakdown voltage of the diode. You have to read this off from figure 6.11 in the textbook. b. Calculate the depletion layer width at the breakdown voltage estimated above. c. Calculate the maximum value of the electric field in the depletion region at breakdown. 2. Consider three p+-n junctions as shown below. Which one will have the highest breakdown voltage? Which one will have the lowest breakdown voltage? Which one will have the highest R-G related current (IR-G) at reverse bias? (Try to understand the physical reasoning). 3. Consider the following Si p-n junction at 300 K. Assume the junction area is A = 1 cm2. p-side n-side NA = 1016 cm–3 ND = 1016 cm–3 Dn = 25 cm2/s Dp = 10 cm2/s τp = 5 × 10–7 s τn = 5 × 10–7 s τ0 = 5 × 10–7 s a. Calculate the ideal reverse saturation current at –5 V reverse bias. p+ ND = 1015 cm-3 p+ ND = 1017 cm-3 p + in tri ns ic ND=1015 cm-3