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A MOSFET Differential Amplifier - Experiment 1 | EE 100B, Lab Reports of Electrical and Electronics Engineering

Material Type: Lab; Class: ELECTRONIC CIRCUITS; Subject: Electrical Engineering; University: University of California-Riverside; Term: Unknown 1989;

Typology: Lab Reports

2009/2010

Uploaded on 03/28/2010

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Download A MOSFET Differential Amplifier - Experiment 1 | EE 100B and more Lab Reports Electrical and Electronics Engineering in PDF only on Docsity! 1 EE100B Experiment 1 A MOSFET Differential Amplifier College of Engineering University of California, Riverside Objective To explore the use of MOSFETs, analog differential amplifiers and current mirrors. The objective is achieved by examining an analog differential amplifier with a current mirror as the current source, all implemented using MOSFETs. Equipment 2 MOSFET Arrays (MC14007UB), 5 10kΩ resistors, function generator, oscilloscope, digital multimeter, DC power supply, breadboard Prelab Read the sections of your textbook relevant to this laboratory session. Estimation of Vt and K In the circuit shown in Figure L1.1, if the voltage VDS (=VGS) and the current ID are known for two different values of VDD, the parameters Vt and K can be computed from ( ) 2 D GS t I K V V= − Write out the expressions for Vt and K in terms of ID and VGS. Figure L1.1 A MOSFET Circuit at DC VDD = 4V or 8V ID RD 10kΩ VDS D G S 2 Current mirror The circuit shown in Figure L1.2 is a current mirror. Assuming Vt and K have been determined as the expressions you obtained in the prelab above, write the expression for ID3. If the two MOSFETs have the same geometry, what is the current ID4? 8Vdc Figure L1.2 A Current Mirror Laboratory Procedure Figure L1.3 shows the pin assignments and schematic of the MC14007UB MOS array. The array consists of 6 transistors, 3 p-channel and 3 n-channel. One critical point to note is that pins 14 and 7, being the substrate connections of all of the p-channel and all of the n-channel devices, respectively, must be connected appropriately, no matter what use is made of any device. In particular, pin 14 must be connected to the most positive supply in use, and pin 7 to the most negative, even if not all the MOSFETs are used. Note also that the voltage between pin 14 and pin 7, must be limited to 18V, otherwise internal voltage breakdown may result. For safety’s sake, maintain this total supply value at or below 16V. Figure L1.3 The MC14007UB MOS Array #1 #2 #3 VDD = 8V ID3 R1 10kΩ Q3 Q4 -VSS = -8V VG ID4 10kΩ External circuit
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