Docsity
Docsity

Prepare for your exams
Prepare for your exams

Study with the several resources on Docsity


Earn points to download
Earn points to download

Earn points by helping other students or get them with a premium plan


Guidelines and tips
Guidelines and tips

Avalanche Breakdown - Analogue Electronics - Exam, Exams of Digital & Analog Electronics

Main points of this past exam are: Avalanche Breakdown, Typical Output, Characteristics, Common Emitter Transistor, Condition, Saturated Region, Avalanche Breakdown

Typology: Exams

2012/2013

Uploaded on 03/30/2013

lalitchohan
lalitchohan 🇮🇳

3

(3)

76 documents

1 / 4

Toggle sidebar

Partial preview of the text

Download Avalanche Breakdown - Analogue Electronics - Exam and more Exams Digital & Analog Electronics in PDF only on Docsity! 1 ELTR 6003 CORK INSTITUTE OF TECHNOLOGY INSTITIÚID TEICNEOLAÍOCHTA CHORCAÍ Summer Examinations 2010 Module Title: Analogue Electronics 2 Module Code: ELTR6003 School: Electrical & Electronic Engineering Programme Titles: Bachelor of Engineering in Electronic Engineering Bachelor of Engineering (Honours) in Electronic Systems Engineering Programme Codes: EELXE_7_Y1 EELES_8_Y1 External Examiner(s): Dr. A. Donnellan Dr. P. O’Sullivan Internal Examiner: Mr. M. O’Gorman Instructions: Answer Question 1 and TWO other questions. Question 1 (worth 40 marks) is compulsory. Questions 2, 3, and 4 are each worth 30 marks. Duration: 2 Hours Sitting: Summer 2010 Requirements for this examination: N/A Note to Candidates: Please check the Programme Title and the Module Title to ensure that you are attempting the correct examination paper. If in doubt please contact an Invigilator. 2 ELTR 6003 COMPULSORY QUESTION Q. 1 (a) Sketch typical output characteristics for a common emitter transistor and illustrate the region where the transistor is said to be saturated. What bias condition exists at the collector-base junction (VCB) when a transistor operates in the saturated region? [10 marks] (b) Briefly distinguish between avalanche breakdown and zener breakdown in a reverse-biased pn-junction. [10 marks] (c) With reference to transistor amplifiers, explain what is meant by the term stabilisation of the operating point. [10 marks] (d) Show how the maximum power dissipation curve for a transistor may be drawn on the transistor’s output characteristics. Illustrate the direction of curve displacement if the ambient operating temperature of the device is to be increased. [10 marks] CHOOSE TWO QUESTIONS FROM Q.2, Q.3, OR Q.4. Q. 2 (a) Draw the circuit diagram of a simple zener diode voltage regulator and briefly explain how the circuit minimises the effects of supply voltage variations on the load voltage. [8 Marks] (b) A zener diode has a reverse breakdown voltage of 9.1V and after this may be considered to be a linear resistance of 18Ω. A simple voltage stabilising circuit using the diode above is to maintain 10V across a constant 500Ω load from a nominal 13.5V supply. Draw the circuit diagram and calculate the value of series resistor required. [12 Marks] (c) If the supply voltage increases by 20%, calculate; (i) the change in load voltage, (ii) the change in diode power dissipation. [10 Marks]
Docsity logo



Copyright © 2024 Ladybird Srl - Via Leonardo da Vinci 16, 10126, Torino, Italy - VAT 10816460017 - All rights reserved