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Digital Signals-Introduction to Microelectronic Circuits-Lecture 26 Slides-Electrical Engineering, Slides of Microelectronic Circuits

This course is taught in University of California, covers the fundamental circuit concepts and analysis techniques in the context of digital electronic circuits. Transient analysis of CMOS logic gates; basic integrated-circuit technology and layout are also included. Digital Signals, Logic Functions, Symbols, Notation, NMOS Inverter, NOT Gate, Voltage Transfer Characteristic, Noise Margins, NMOS NAND Gate, NMOS NOR Gate, Disadvantages, NMOS Logic Gates, CMOS Inverter, Voltage Transfer, Load Line

Typology: Slides

2011/2012

Uploaded on 02/27/2012

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Download Digital Signals-Introduction to Microelectronic Circuits-Lecture 26 Slides-Electrical Engineering and more Slides Microelectronic Circuits in PDF only on Docsity! 1 Lecture 26, Slide 1EECS40, Fall 2003 Prof. King Lecture #26 ANNOUNCEMENTS • Extra Office Hours this week: – Prof. King: Thursday 10/30 12-2 PM – Steve: Friday 10/31 12-2 PM – Farhana: • Review session: Friday 10/31 2-4 PM, 120 Latimer OUTLINE • Logic functions • NMOS logic gates • The CMOS inverter Reading • Schwarz & Oldham: Chapters 11.2, 15.3 • Rabaey et al.: Chapter 5.2 Lecture 26, Slide 2EECS40, Fall 2003 Prof. King Digital Signals • For a digital signal, the voltage must be within one of two ranges in order to be defined: • Positive Logic: – “low” voltage ≡ logic state 0 – “high” voltage ≡ logic state 1 “1” “0” VOH VIH VIL VOL undefined region increasing voltage VDD 0 Volts 2 Lecture 26, Slide 3EECS40, Fall 2003 Prof. King Logic Functions, Symbols, & Notation “NOT” F = A TRUTH NAME SYMBOL NOTATION TABLE FA 111 001 010 000 FBA “OR” F = A+BFAB 01 10 FA 111 101 110 000 FBA “AND” F = A•BFA B Lecture 26, Slide 4EECS40, Fall 2003 Prof. King “NOR” F = A+B 011 101 110 000 FBA “NAND” F = A•BFAB 011 101 110 100 FBA “XOR” (exclusive OR) F = A + BFA B FAB 011 001 010 100 FBA 5 Lecture 26, Slide 9EECS40, Fall 2003 Prof. King Disadvantages of NMOS Logic Gates • Large values of RD are required in order to – achieve a low value of VOL – keep power consumption low Large resistors are needed, but these take up a lot of space. • One solution is to replace the resistor with an NMOSFET that is always on. Lecture 26, Slide 10EECS40, Fall 2003 Prof. King The CMOS Inverter: Intuitive Perspective VDD Rn VIN = VDD CIRCUIT SWITCH MODELS VDD Rp VIN = 0 V VOUT VOUT VOL = 0 V VOH = VDD Low static power consumption, since one MOSFET is always off in steady state VDD VIN VOUT S D G G S D 6 Lecture 26, Slide 11EECS40, Fall 2003 Prof. King CMOS Inverter Voltage Transfer Characteristic VIN VOUT VDD VDD0 0 N: off P: lin N: lin P: off N: lin P: sat N: sat P: lin N: sat P: sat VDD VIN VOUT S D G G S D A B D E C Lecture 26, Slide 12EECS40, Fall 2003 Prof. King CMOS Inverter Load-Line Analysis VOUT=VDSn IDn=-IDp 0 VDD VIN VOUT IDn=-IDp – V GSp =V IN -V DD + VIN = VDD + VGSp increasing VIN increasing VIN VIN = 0 V VIN = VDD VDD VOUT = VDD + VDSp VDSp = 0VDSp = - VDD – VDSp=VOUT-VDD + 0 7 Lecture 26, Slide 13EECS40, Fall 2003 Prof. King VOUT=VDSn IDn=-IDp 0 VDD 0 CMOS Inverter Load-Line Analysis: Region A VDD VIN VOUT IDn=-IDp – V GSp =V IN -V DD + – VDSp=VOUT-VDD + VIN ≤ VTn Lecture 26, Slide 14EECS40, Fall 2003 Prof. King VOUT=VDSn IDn=-IDp 0 VDD 0 CMOS Inverter Load-Line Analysis: Region B VDD VIN VOUT IDn=-IDp – V GSp =V IN -V DD + – VDSp=VOUT-VDD + VDD/2 > VIN > VTn
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