diode characteristics diode applications, MOSFET Characteristics and Biasing | EE 332, Lab Reports of Electrical and Electronics Engineering

Download diode characteristics diode applications, MOSFET Characteristics and Biasing | EE 332 and more Lab Reports Electrical and Electronics Engineering in PDF only on Docsity! 1 EE 332/532 LABORATORY I Diode Characteristics Prelab: 1. Familiarize yourself with data sheets for the lN4001 p-n junction diode, the MBR340 Schottky barrier diode, and an LED diode. 2. Design a circuit for measuring the ID-VD diode forward characteristics for ID £ 5 15 mA. Use an adjustable power supply whose voltage Vs can be varied in the range from 0 to 20 V. 3. Determine the small-signal model of a p-n junction diode and Schottky diode at ID £ 1 mA and 4 mA. Compare the small-signal resistance at two dc currents. 4. Using the data sheets for the p-n junction diode: a) Determine the maximum forward current and the maximum reverse voltage. b) Find a large-signal constant-voltage-drop model. c) Find a large-signal constant-voltage-drop/constant-forward-resistance model for the diode current 1 mA £ ID £ 1 A. 5. Repeat step 4 for the MBR340 Schottky barrier diode and LED diode. Compare the large- signal models for the p-n junction diode, the Schottky diode, and the LED diode. Experiments: 1. p-n Junction Diode (Fig. 1-a) a) Measure and plot the ID - VD forward characteristics for the IN4001 diode up to 12 mA. b) Measure the small-signal resistance rd at ID = 1 mA and ID = 4 mA. 2. Light-Emitting Diode (LED) (Fig. 1-b) a) Connect in series a DC power supply, a 100 W (current-limiting) resistor, and a red LED. b) Adjust the supply voltage until the first "visible light" is noticed. Measure the 'firing level" of ID and VD c) Increase the supply voltage until 'good brightness' is reached. Measure ID and VD at the bright light. 3. Schottky Diode Repeat the Experiment 1 for the MBR340 Schottky diode. Postlab: Submit a written report. 2 1. Sketch the ID - VD characteristics and calculate the small-signal resistance at ID = 1 and 4 mA for the IN4001 diode from the slope of the ID –V curve. Compare this small-signal resistance to the one found in prelab and to the measured values. 2. Sketch the ID - VD characteristics and calculate the smah-signal resistance at ID = 1 and 4 mA for the Schottky diode from the slope of the ID-VD curve. Compare this small-signal resistance to the one found in prelab and to the measured values. 3. Compare the forward voltage drop for p-n junction diode, Schottky diode, and the LED. Circuit Schematics: Figure 1-a: Diode Test Circuit. Figure 1-b: LED Test Circuit. Testing a diode with an Ohm-meter: To verify if a diode is good or failed, measure a DC forward resistance (use 1 kW range) and a DC reverse resistance. A good diode will have a low forward resistance and a very large DC reverse resistance. Ratio of the reverse to forward resistances should be at least 1000:1. 5 EE 332/532 LABORATORY III MOSFET Characteristics and Biasing Prelab: 1. Familiarize yourselves with data sheets for the 2N7000 MOSFET. 2. Design a circuit for biasing the enhancement n-channel 2N7000 MOSFET employing the voltage-divider bias to meet the following specifications: a) VDD = 16 V. b) Set the operating Q-point at ID = 4 mA and VDS = 8 V. c) Current through the voltage divider IVD £ 20 uA, which is the current flowing through R1 and R2. 3. Draw the DC load line for the specified case and label the slope and the crossing points. 4. Calculate gm and ro, at ID = 1 mA and 4 mA assuming VA = -50 V. How does the drain current affect gm and ro? Experiments: 1. Measure and plot the ID-VGS and ID-VVS characteristics of the 2N7000 MOSFET for VGS£2.25V and VDS£10 V using the test circuit shown in Fig. 3-b. Measure the threshold voltage Vt of the MOSFET. Enter the collected data in the data table 2. Observe and record the output characteristics of the MOSFET on the curve tracer. 3. Build and test the circuit for biasing the MOSFET designed in prelab 2 (Fig. 3-a). Measure VS, VG, VD, VGS, VDS, VDG, and ID. Adjust the component values so that the given specifications are met Postlab: Submit a written report. 1. Plot ID-VGS and ID-VDS characteristics of the 2N7000 MOSFET and determine gm and ro, at ID=4 mA from the slope of the measured characteristics. 2. Compare the theoretical and measured results, i.e., VS, VG, VD, VGS, VDS, VDG and ID 3. Compare ID-VDS curves obtained from curve tracer and measured point by point. 6 4. Give conclusions drawn from the experiments. Circuit Schematics: Figure 3-a: Voltage-Divider Self- Bias. Figure 3-b: MOSFET Test Circuit. Data Table: Measure and record ID at the corresponding VGS and VDS. VDS VGS 0.1V 0.2V 0.3V 0.4V 0.5V 1.0V 2.0V 4.0V 6.0V 8.0V 10.0V 2.25V 2.00V 1.75V 1.50V 7 EE 332/532 LABORATORY IV MOSFET Common-Source Amplifier Prelab: 1. Design a common-source amplifier with the following specifications: a) AV ≥ 12 b) Vam.≥ 2V@f = l kHz C) Rin ≥ 500 kW d) Ro < 1 kW e) RL = 10 kW f) RGEN = 1kW g) 12 V £ VDD £ 18 V h) Reactances of the coupling and by-pass capacitors to be less than 10 W at 1 k Hz. 2. Draw the dc and ac load lines for the designed amplifier. Experiments: 1. Build and test the amplifier designed in prelab 1. Measure ID, VGS,VDS, Ri and Ro. Adjust the component values so that the specifications are met 2. Measure the maximum output voltage amplitude Vom(max) without distortion. Figure 4: Common-Source Amplifier. Postlab: 1. Compare the theoretical and measured results, i.e., ID, VGS, VDS, Av, Ro, Rin and Vom(max). 2. Give conclusions drawn from the experiments.