Download HCF4007UB Integrated Circuit Datasheet and more Exams Electrical and Electronics Engineering in PDF only on Docsity! 1/8September 2001 ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS ■ MEDIUM SPEED OPERATION tPD = 30ns (Typ.) AT 10V ■ QUIESCENT CURRENT SPECIFIED UP TO 20V ■ 5V, 10V AND 15V PARAMETRIC RATINGS ■ INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C ■ 100% TESTED FOR QUIESCENT CURRENT ■ MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4007UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4007UB type is comprised of three n-channel and three p-channel enhancement type MOS transistors. The transistor elements are accessible through the package terminals to provide a convenient means for constructing the various typical circuits as shown in typical applications. More complex functions are possible using multiple packages. Number shown in parentheses indicate terminals that are connected together to form the various configuration listed. HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER PIN CONNECTION ORDER CODES PACKAGE TUBE T & R DIP HCF4007UBEY SOP HCF4007UBM1 HCF4007UM013TR DIP SOP HCF4007UB 2/8 INPUT EQUIVALENT CIRCUIT LOGIC DIAGRAM PIN DESCRIPTION ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS PIN No SYMBOL NAME AND FUNCTION 2, 11 SP2, SP3 Source Connections to 2nd and 3rd p-channel transistors 13, 1 DP1, DP2 Drain Connections from the 1st and 2nd p-channel transistors 8, 5 DN1, DN2 Drain Connections from the 1st and 2nd n-channel transistors 4, 9 SN2, SN3 Source Connections to the 2nd and 3rd n-channel 12 DN/P3 Common connection to the 3rd p-channel and n-channel transistor drains 6, 3, 10 G1 to G3 Gate connections to n-channel and p-channel of the three transistor pairs 7 VSS Negative Supply Voltage 14 VDD Positive Supply Voltage Symbol Parameter Value Unit VDD Supply Voltage -0.5 to +22 V VI DC Input Voltage -0.5 to VDD + 0.5 V II DC Input Current ± 10 mA PD Power Dissipation per Package 200 mW Power Dissipation per Output Transistor 100 mW Top Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C Symbol Parameter Value Unit VDD Supply Voltage 3 to 20 V VI Input Voltage 0 to VDD V Top Operating Temperature -55 to 125 °C HCF4007UB 5/8 TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) HCF4007UB 6/8 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 Plastic DIP-14 MECHANICAL DATA P001A HCF4007UB 7/8 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S 8° (max.) SO-14 MECHANICAL DATA PO13G
