Homework 4 Problems on Microelectronic Circuits | ECE 3040, Assignments of Electrical and Electronics Engineering

Download Homework 4 Problems on Microelectronic Circuits | ECE 3040 and more Assignments Electrical and Electronics Engineering in PDF only on Docsity! Homework 4 A silicon p-n diode has a doping of Na=2x1018 cm-3 and Nd=9x1015 cm-3 and mobilities in the two regions of µn=1000 cm2/V-Sec, µp=200 cm2/V-Sec, minority carrier lifetimes in the two regions of τn=10 µS τp=1 µS 1) What is the depletion width (total, W) and width on each side of the junction (xn and xp)? 2) Why is the value of xp different from xn (i.e. why is the depletion region assymetric)? 3) What is the built in voltage? 4) What is the leakage current density, Jo (not Io)? 5) Write out the J-V equation of the diode explaining which part is due to diffusion current and which part is due to drift current. 6) What is the capacitance per unit area and the small signal diode resistance at 0 volts? 7) What is the capacitance per unit area and the small signal diode resistance at -3 volts (i.e. reverse bias)? 8) What is the capacitance per unit area and the small signal diode resistance at +0.5 volts (i.e. forward bias)? 9) The diode is to be used in a 2GHz oscillator circuit for a cell phone and thus is placed in parallel with a 12 nH inductor. If the device is intended to be biased at - 3 V (see results from problem above), what diode area is required? 10) If the bias voltage is changed to -1V, what is the shift in frequency that results? 11) Using the Ideal Diode Model for the circuit below, draw a graph of the Output voltage (y- axis) vs Input voltage (x-axis) for all voltage inputs between -10 and +10 V. Repeat with the CVD model using a turn on voltage of 0.6 V.