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University of California at Berkeley
College of Engineering
Dept. of Electrical Engineering and Computer Sciences
EE 105 Midterm If
Spring 2002 Prof, Roger T. Howe April 17, 2002
(SObprots,
Your Name (Last, First)
Guidelines
Closed book and notes; one 8.5” x 11” page (both sides) of your own notes is allowed
You may use a calculator,
Do not unstaple the exam.
Show all your work and reasoning on the exam in order lo receive full or partial credit.
Score
Paints
Problem | Possible | Score
| 16
Totat 50
. Junction Meld-Hifect ‘Transistor (JPET) Modet. [16 ports].
b Device parameters:
' fogs = 125 WA
Vp=-15V
G vps hy = 0.05 V"
A simplified large-signal model for an n-channel JF ET 1s:
2L ass Vos ss 7 .
| in= — (veg —Vp = Woy (L+4,¥ig) for Yay SYe¢ —Pp and F,, < v4 SOV (triode)
| £
Faye j ‘i ; i
ings _ Gig Kn) 4 Avy HOF ¥ yy 2% yy —K) and V, SVpy $0 ¥ (saturation)
where Mp is the pinch-off voltage and ,, is the “fudge factor.”
(a) [4 pts.) Skewwh the drain characteristics for this JPET on the graph beluw for
Vos= 0 V,-0.5 V,-1 V, and —1.5 V. You can set 4,= 0 for this part. Your current
values in saturation should be accurate.
Vasa
150 ov ney
-O5¥ sr iv
125 My j4# 05
-1-5V oO e
100
in (WAl
wi
(c) [3 pts.] Find the numerical value of the output resistance R,., of this amplifier in
kQ. If you couldn’t solve part (a), you can assume for this part that the channel
width W’= 100 um (not the correct answer to (a), of course.) )
Pont = x Rag (Ves = 0 mm sgemre Ine. geoerat
é
fl t i
> Guy 4+) ~ fen gpaN Vina O2s 1
Ruf = TORN SAD
[a= a]
= $000,
(d) [3 pts.] Find the numerical value of the two-pori parameter 4,, the open-circuit
vollage gain, for this amplifier. Again, if you couldn't solve part (a), you can
assume for this part that the channel width = 100 jm (not the correet answer to
(a), of course.)
[ae = i] ance Gut cm de gna
(e) [3 pts.] Find the overall voltage gain vy / v, with Ry and R, present (values of
which are given next to the schematic on the previous page). [If you couldn't
solve (c) or (d), you can assume for this part that Ri = 2.5 kQ, and 4, = 0.85.
Needless to say, these are not correct answers to either (c) or (d).
Re j
—
4
V5 9 Ye
sy RB (02
Yndt Aye me Be Si
Ss Kat + Ke $S¢L +/ 00008
| * fo = 0.89
(£) [3 pts.] We now remove the small-signal source and its resistance and replace iL
with a large-signal source ¥jy; we also remove the load resistor. Assuming the
MOSFET remains in the saturation (constant-current) region, find an equation for
yyy in terms Of vpy7. What is the numerical value of v,, for the case when
Your = 2 ¥? Ifyou couldn't solve part (a), you can assume that W’ = 100 jum for
this part.
2-5V .
= 2.5V—€ by) Por
: Sn” om ss
an Reve = pela MAL) (Me + \) (i+ a
ied Vue
Veg = Urine ~ Vins
his We, = Mp
sa oe Ww, 2
én, = Ap lox C Pat.) (vy Hy +E V4, Vee)
Your = 25M — Aplin Roop (Wa) Canin Von) (14 in Yon)
(4% Con Pvp (4 WRU 4 Yn Your) ivr = tas + View y* - 2
tec
Vor
Your ~ Ving + Vee =} pare Your a
Moca
I ——_
| i =
| = We * “ — if 25voy
—
a fee —— WwW)
Veur = 2Y =
3. npn bipolar transistors [16 pts.]
.,
+
4 pA Pour
Va=2¥ e
Given:
Base width = Wy = 100 nm = 0.1 um
Emitter-base junction area = Ay =4.5 am?
Emitter width = Wy = 75 nm = 0.075 pm
Base-collector junction area = Ae =)5 jum
Electron diffusion constant in base: Dy = 10 em*/s
[lole diffusion constant in emitter: Py = 5 em"/s
Electron charge: ¢ =-1.6x 101.C
Intrinsic concentration: + = 10" em™
Fin = 26 mV
(a) [4 pts.] Find the numerical value of the electron diffusion current density J,g in
the base [units pAYpor]. Neglect the base current / for this part.
L. = Tia Ae La =
= Te A
Ing = Ae oat
(b) [4 pts.] What is the numerical value of n,g(x¢ = 0), the minority electron
concentration in the base at the edge of the emitter-base depletion region? Again,
vou can neglect the base current J, for this part.
# Th Mpg Cx
cee
Tipp (x0) = ~ tao i
W, a ee - fie
Bt a a Mae
(ie x19 FC) (Zoe fe)
a
|
Thalt)= 1-56 x 10"
=