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Lecture Slides on p and n Channel of MOSFET - Microelectronics Technology | ECSE 2210, Study notes of Electrical and Electronics Engineering

Material Type: Notes; Class: MICROELECTRONICS TECHNOLOGY; Subject: Electrical & Comp. Sys. Engr.; University: Rensselaer Polytechnic Institute; Term: Unknown 2006;

Typology: Study notes

Pre 2010

Uploaded on 08/09/2009

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Download Lecture Slides on p and n Channel of MOSFET - Microelectronics Technology | ECSE 2210 and more Study notes Electrical and Electronics Engineering in PDF only on Docsity! Metal! CVD oxide Source (ESSN \ Drain x AT ee — Gate oxide p-substrate Bulk: (a) Cross-section Gate Source Drain Bulk (b) Circuit symbol Figure 2.3. An n-channel MOSFET. Sve w Figure 2.4. Top-view of an n-channel MOSFET. Metall — oxide TV source jocspare | > SSS n-well Bulk p-substrate iN. (a) Cross-section Poly w n-well Gate Dre Source Bulk (b) Circuit symbol Figure 2.6. Top-view of a p-channel MOSFET. p-epitaxial layer (for devices) pt-type wafer Figure 2.8. Epitaxial layer growth Location of nMOSFET Location of pMOSFET —t------ > —t------ > ell p-type epitaxial layer Figure 2.9, MOSFET placement. Suess-relief oxide Silicon Nitride (Si, Ng ) pr rild oy \ well Petype (a) Active Area Definition (b) FOX Growth Figure 2.10. Active arca definition and field oxide growth.
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