P-N Junction Diode: Diode Equation, I-V Characteristics, and Reverse Breakdown Mechanisms , Study notes of Basic Electronics

Download P-N Junction Diode: Diode Equation, I-V Characteristics, and Reverse Breakdown Mechanisms and more Study notes Basic Electronics in PDF only on Docsity! P-N Junction Diode Jaeger/Blalock Microelectronic Circuit Design McGraw-Hill Chapter 3 Diode Equation iD = I S exp qvD nkT ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ −1 ⎡ ⎣ ⎢ ⎤ ⎦ ⎥ = I S exp vD nVT ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ −1 ⎡ ⎣ ⎢ ⎤ ⎦ ⎥ IS = reverse saturation current (A) v = voltage applied to diode (V)D q = electronic charge (1.60 x 10-19 C) k = Boltzmann’s constant (1.38 x 10-23 J/K) T = absolute temperature n = nonideality factor (dimensionless) VT= kT/q = thermal voltage (V) Jaeger/Blalock Microelectronic Circuit Design McGraw-Hill Chapter 3 Analysis of I-V Characteristics ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ −⎟ ⎠ ⎞ ⎜ ⎝ ⎛ ⋅ = 1 1 exp kT qvIi DdiffS diff D ⎥ ⎤ ⎢ ⎡ ⎟ ⎞ ⎜ ⎛ 1exp qvIi Dscrgscrg ⎦⎣ − ⎠⎝ ⋅ = 2 kTSD τ2 discrg S wqnJ = Jaeger/Blalock Microelectronic Circuit Design McGraw-Hill Chapter 3 Diode Behavior with Reverse Bias Increasing reverse bias eventually leads to an abrupt increase in current . This behavior, known as “breakdown,” occurs at a h t i ti lt Vc arac er s c vo age, Z. v 2 V < VZ < 2000 V j Rscrg S scrg S II φ += 10 Jaeger/Blalock Microelectronic Circuit Design McGraw-Hill Chapter 3 Reverse Breakdown Mechanisms Avalanche Breakdown (light doping) Fundamental limit to current blocking capability of diodes in reverse bias dcritbd wEV ⋅= Zener Breakdown (heavy doping) The depletion region is very narrow and reverse bias leads to carrier tunneling between conduction and valence bands. Jaeger/Blalock Microelectronic Circuit Design McGraw-Hill Chapter 3