MOS Biasing Circuits, BJTs-Bipolar Junction Transistors | ECE 3050, Study notes of Electrical and Electronics Engineering

Download MOS Biasing Circuits, BJTs-Bipolar Junction Transistors | ECE 3050 and more Study notes Electrical and Electronics Engineering in PDF only on Docsity! ECE 3050 — Dafe 8/23/02. __ Rage 1 » Homework"t — Dro p problems 2and 4. and replace. with Ieoblem. 4,52 and $5.47 of th. text. © Lecture notes way be downloaded in pat at fhe veb srfe - bitps /users, Cee gtteck, edu /~ pallen/ Academic J ECE350/ ece. htm ~« HOS Blasing Circuits Biosing adefines Tha de operating pois af a Andy or transistor. LL) Single biasing cht, CLast lecture) 3.) Move sable biasing ck. Von Yop . Feedback & Suppose tps increases, eo &p bs OS @ Vy increases "Wes 8 Ve stays constant “ed ‘y & 2. Ves decreases > = s> Ke (Ves Urn) + Decreases Zz x. fov Lf Ki 25«bN*, a2, z ey Bo = BK ard VegetV, Liat & port Find Losa , Vesa , Vosq pa le 222k) VyaUe ~ 0 £ ae oY 2.) Gua hifi = 60K Ve ECE 3050 Date _8/23/oz. Page ot Ex. 3)-— Cont of Gate low: Vee= “estZoss — oy= Kt (Ves-Vrw) re Ass ume saturat tur Vee = vi ust Ry Be Kw (Ves Urw)* te Ge Vet 278 (Ue i)* Veg = 0,882 "2 Az me Vese = 21720 losa= a2. 10 (2079-1) a4 =/74ah Von = Los(Rot bs) #¥psa —t Vosa= 10 - #4(a04) =x05V Saturation occurs when Vps 2 Veer Vew 305 2 2 2.17F~ 7 Yes Buk eed 7 % ‘ w= Us afk (74nd) g it EY Voge et _— Wa é, Ge |, | 8 favonefers of fle MOSFET lorge Siquak Medels ave ky’, Vo, &% X54 Ade (—e tty’ $ Vow J FETs D ¢ n- chaanel S a JFET DS s Toss Np afinck 8 Mes off Pot. Troms conduckonce