EE 321 Lab 4: Fall 2002 - Transistor Circuit Analysis, Lab Reports of Electrical and Electronics Engineering

Download EE 321 Lab 4: Fall 2002 - Transistor Circuit Analysis and more Lab Reports Electrical and Electronics Engineering in PDF only on Docsity! EE 321 Lab 4 Fall 2002 EE 321 - Exam 3 November 15, 2002 Name: Closed book. One page of notes and a calculator are allowed. Show all work. Partial credit will be given. No credit will be given if an answer appears with no supporting work. For all the circuits below, assume the capacitors are large so they block DC and pass all signals of interest. 1. In the circuit below, both transistors have β = 100. (a) Find the bias voltages VB1, VC1, VE1, VC2 and VE2. (b) Find the bias collector currents IC1 and IC2. (c) Find the small-circuit parameters for Q2: rπ, re and gm. RL RS R2 R1 RC1 RC2 1mAE1 R +12V 10K 30K 15KvS Q1 Q2 3.3K 1.5K 2.2K 1 / (45 DC - Cap her tes are Oper Cteees dF ~ Veg . Rew z ke Ze, ° Pe ude fu ar m—_t hea Ky | Ino "ate" on R 4 Vea ~ Ves viz YV Rekha IS Fe Ree : Ru fy: (rm JB or) = /Ok (S24 364) Kuve thyugt Q, ' Vag” Ta, Lea * “se # (B41) a ke, Vap- Vee ~ Te, = A eae > 0.020n4 Rpg t(6+1) Te, Mok £ (rorfCE Sky AG Wi) Tg = Al nA Te: OT, 2 29m” i* E, BE, B.ty+o fe 3.%U Vos Me- Ri fe. - Ta.) Dai know Tey ge Te = lan a oe Ve, 2 3.9¥ Ta.* Tr, [G4 > 9909508 hie qisv Te = 8 Te, 7 O94 m4 Ve, = 30u Ve, > Veg 7 Ke, (X, - Te. )* ZL. sv Var - 43 osu | Ve > Ve, = Lov Vo, = & FY [ Vey > Vg, ~Vee 2 BEY O44 > 6. Ver> 6 | Vee, ¥YY Hetwe Yew = Ve = Fey Ren > BAM Vee, 2 2 0¥ Revie} /bvK Veer Ta ha + Vge tlOtiiyghec Ver - Vag 2 bev oY Te Re «(01) te rook) (0 (mK) Te Ory Re © Bran Veo Te fe sRilv ZL. - OTe > Fil nw Ver Yeo ~Te Ro = 0.4% v oe i Veg 2 Mer Me 2 BOY sy W is Vr Bray 36S fer ow Te Fo tod 0.0%) n# ve 59 sol - Use T me dl c ae Cs : Oee : Rc ay So ] %66 poe BY poe ; , Rg te Us V ‘x } ior BTN > & te) Vo - of le Re ‘ Ws te= o—— YetRe - z Vo a Fe Vv. Ye + ke ve ~o Re 0. sa l/y Vs ry, + Re vs Gi Ri be . as . te = se ge bx 4 Oy Lx = Ra "Be gh (Bt) (ve + Re | ; : vs ws Cot by f by = Ra © iC rer Me) v ' ‘ Us ws Vs to, Fa * (Ged Cates) Re (bt (rer ke) Roe Rall (lniCrerhe) = 1K CorCoasey = STK Checautr we have he) EE 321 Lab 4 Fall 2002 (e) Find the value of β needed for the BJT in the circuit below such that the BJT is just on the edge of saturation – i.e., IB = IBEOS . RC 3V 10K 800 +12V RS Ω Ω 3