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Old Test III with Answer Key - Microelectronic Circuits | ECE 3040, Exams of Electrical and Electronics Engineering

Material Type: Exam; Professor: Doolittle; Class: Microelectronic Circuits; Subject: Electrical & Computer Engr; University: Georgia Institute of Technology-Main Campus; Term: Spring 2001;

Typology: Exams

Pre 2010

Uploaded on 08/05/2009

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Download Old Test III with Answer Key - Microelectronic Circuits | ECE 3040 and more Exams Electrical and Electronics Engineering in PDF only on Docsity! ECE 3040B Microelectronic Circuits Exam 3 April 12, 2001 Dr. W. Alan Doolittle ° Solutions Print your name clearly and largely: Test Average 53.52174 Test Standard Deviation 16.32413 Broken down by question Question] 12,3 4 = 5 6 7 8 9 1 1 14 % Score per Question 100 71.7 73.9 56.5 68.1 71 60.9 72.6 65.1 38.7 46.7 28.5 1st 25% 62.81159 2nd 25% 65.94203 3rd 25% 68.84058 4th 25% 28.52174 apes 06 08 OL os os Ov oe 0z ooL Number of Test Scores N o > a ab 7.) (B-points) g.) Voltage, Current, Transconduc’ h.) Input Impedance should be Hi i.) Output Impedance should be Hi; Rk i, 4 ‘out e — i, SR SR, Rain RS toe Second 25% Short Answer: 8.) (10-points) Draw the cross-sectional view (view from the side) of a NMOS transistor biased in linear and in saturation modes (two separate drawings). Label the source, gate, drain, channel, substrate and indicate the doping type of the source, drain and substrate. Linear: Channel Inversion layer (n-type) P-type Substrate Saturation: Vost Yn S '———_- t+ D —T os NF \ 9.) (15-points) Draw and label the energy band diagram of a NMOS Enhancement mode Capacitor in equilibrium, depletion and deep inversion (3 drawings) labeling the fermi, intrinsic, conduction and valence energies. All regions are shown below (including accumulation, which was not asked for). In each picture, the left most material is the metal, then the oxide, with the rightmost material being the semiconductor. Ec Energy Ef a: band ke Ef diagram Ef be wie aE cot ey ef ---— Pm Ey Ef Ev Applied dc Wo=0 Vg<0 Vz>Vg>0 voltage Flat band Accumulation Depletion Inversion Third 25% Problems (3° 25%) 10.) (10-points) Determine the voltage gain, input resistance and output resistance of the following circuit. You may assume that the Op-Amps are ideal. Rl Va ini Vout = 0.5Vin Va=Vin Rl Rl+R2 Vb= (: Va =2Va Rl Ve=Vin Ri Ri Vout = -—Vb-—Ve Ri Ri Vout =-2Va—-Vin Vout =—Vin—Vin Vout ——=-2 VIV Vin RK, = ak | Kour =O [Vino = V,2U20 | Extra work can be done here, but clearly indicate with problem you are solving. Vos, = 10 666.8 (10k) 2 333V DO Ves-Vp = 3-1 RT r t ' een ot Saturanon 18 va lial, Asbu my Do current Sonece 2s Since rhe vem * carreny Me Cans tans ‘ GULeCS A ‘ - r be in $& Fura e107 « meee wy Los,= 2mFt TY a VK= amACik) = av’ Ves2 B33V- 2V = L33Vv G5, ~ VT a 2 Los3 Amit mae -~ AOI2A Afv ? Ves, —Vr ~ (33-1 ° ( » a | | = l= SETI = GBBT pe OL EG > IEG fo, = 720, 000 $2. Extra work can be done here, but clearly indicate with problem you are solving. | Steph: Wen = 5s v / Vesa + Im VGsa (lla) 2 9m, V5, (« IIe) Vour = Jra Vo52 (Glas) Vous Vout ys 2 Th? eae VI 51 Vain Vo5% VW95, Vn = (ams Ge! (Il) [ aE | @ Nout . 2 -94Gll fe) Jra(k Meo) UU tam, ile) Standard ee Rl CF gain Standarl CY 5a You could hove wiitten tAIS doi Th 1 PL ate? A. “pg to
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