Slides on Mosfet I-V, Quantitative Operation - Electronic Circuits I | EEL 3304, Study notes of Electrical and Electronics Engineering

Download Slides on Mosfet I-V, Quantitative Operation - Electronic Circuits I | EEL 3304 and more Study notes Electrical and Electronics Engineering in PDF only on Docsity! 1 L15. MOSFET I-V • Review – MOSFET device structure – Current technology – Qualitative operation • Reading – Chapter 4 (MOS Field-Effect Transistors) Quantitative I-V • Assume vGS> VT and vGD > VT N+ N+ P-type S G D B dx x=0 x=L W Device parameter: Oxide capacitance = Quantitative I-V Material Parameter Electron mobility = Quantitative I-V 2 Quantitative I-V Define: kn' = NMOS Transistor Regions of operation Mode Gate-to-source Capacitor Gate-to Drain Capacitor Cutoff Depletion Depletion Linear Inversion Inversion Saturation Inversion Depletion Circuit Symbol G D S B Complete G S D Simplified (Body is tied to the source) I -V Relationship (1) Cutoff n+ n+ S D G P DI = 0 ID VDS (2) Linear n+ n+ S D G P ID VDS n (If VT positive, enhancement mode) (If VT negative, depletion mode) ID ∝ induced inversion charge in the channel Cox (VGS - VT)